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| SIEGET(R) 25 NPN Silicon RF Transistor * For medium power amplifiers * Compression point P -1dB = +19 dBm at 1.8 GHz maximum available gain G ma = 14 dB at 1.8 GHz Noise figure F = 1.25 dB at 1.8 GHz * Transition frequency f T = 24 GHz * Gold metalization for high reliability * SIEGET (R) 25 - Line Siemens Grounded Emitter Transistor 25 GHz f T - Line BFP 450 3 4 2 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFP 450 Marking Ordering Code ANs Q62702-F1590 Pin Configuration 1=B 2=E 3=C 4=E Package SOT-343 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation, T S 96 C Junction temperature Ambient temperature Storage temperature Thermal Resistance Junction - soldering point 1) Symbol Value 4.5 15 1.5 100 10 450 150 -65 ...+150 -65 ...+150 130 Unit V VCEO VCBO VEBO IC IB Ptot Tj TA Tstg RthJS mA mW C K/W 1) TS is measured on the collector lead at the soldering point to the pcb Semiconductor Group Semiconductor Group 11 Sep-09-1998 1998-11-01 BFP 450 Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter Symbol Values min. DC characteristics Collector-emitter breakdown voltage I C = 1 mA, I B = 0 Collector-base cutoff current VCB = 5 V, IE = 0 Emitter-base cutoff current VEB = 1.5 V, I C = 0 DC current gain I C = 50 mA, VCE = 4 V AC characteristics Transition frequency IC = 90 mA, VCE = 3 V, f = 1 GHz IC = 90 mA, VCE = 3 V, f = 2 GHz Collector-base capacitance VCB = 2 V, f = 1 MHz Collector-emitter capacitance VCE = 2 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Noise figure IC = 10 mA, VCE = 2 V, ZS = ZSopt , f = 1.8 GHz Power gain 2) IC = 50 mA, VCE = 2 V, ZS = ZSopt, ZL = ZLopt , f = 1.8 GHz Insertion power gain IC = 50 mA, VCE = 2 V, f = 1.8 GHz, ZS = ZL = 50 Third order intersept point IC = 50 mA, VCE = 3 V, ZS =ZSopt , ZL=ZLopt , f = 1.8 GHz 1dB Compression point IC = 50 mA, VCE = 3 V, f = 1.8 GHz, ZS=ZSopt , ZL=ZLopt Unit max. 6.5 600 100 150 V nA A - typ. 5 80 V(BR)CEO I CBO I EBO hFE 4.5 50 fT 15 24 17 0.48 1.33 1.75 1.25 0.75 1.6 GHz Ccb Cce Ceb F pF dB Gma - 14 - dB |S21|2 8 11 - IP3 - 29 - dBm P-1dB - 19 - 2) Gma = |S21 / S12| (k-(k2-1)1/2) Semiconductor Group Semiconductor Group 22 Sep-09-1998 1998-11-01 BFP 450 Common Emitter S-Parameters f GHz MAG S11 ANG MAG S21 ANG MAG S12 ANG MAG S22 ANG VCE = 2V, IC = 50mA 0.01 0.1 0.5 1 2 3 4 5 6 0.143 0.469 0.681 0.705 0.73 0.752 0.783 0.797 0.813 -30.7 -121.7 -172.4 173.1 154.7 139.5 124.1 112.5 103.7 69.9 51.98 14.86 7.26 3.42 2.22 1.62 1.23 1.01 174.8 125.6 90.7 74.6 55 38.4 22.4 8.8 -2.9 0.0018 0.0139 0.0289 0.047 0.08 0.1183 0.1461 0.1633 0.1864 85.2 59.6 51.4 55.7 51.2 42 30.3 20.7 12.6 0.904 0.744 0.466 0.464 0.491 0.529 0.587 0.606 0.625 -6.6 -64.2 -146.1 -172.2 163.6 145.5 131.9 119.5 108.9 Common Emitter Noise Parameters f GHz Fmin 1) dB Ga 1) dB opt MAG ANG RN rn - F50 2) dB |S21|2 2) dB V CE = 2V, I C = 10mA 0.9 1.8 2.4 3 4 0.9 1.25 1.45 1.7 2.1 15.5 11.8 10.9 8.5 6.6 0.29 0.47 0.56 0.62 0.66 175 -171 -159 -147 -127 2.7 3 3.5 5.5 15.5 0.054 0.06 0.07 0.11 0.31 0.98 1.74 2.23 3.05 4.49 16 9.5 6.8 4.7 1.9 1) Input matched for minimum noise figure, output for maximum gain 2) Z S = ZL = 50 For more and detailed S- and Noise-parameters please contact your local Siemens distributor or sales office to obtain a Siemens Application Notes CD-ROM or see Internet: http://www.siemens.de/Semiconductor/products/35/35.htm Semiconductor Group Semiconductor Group 33 Sep-09-1998 1998-11-01 BFP 450 SPICE Parameters (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax) : Transistor Chip Data IS = VAF = NE = VAR = NC = RBM = CJE = TF = ITF = VJC = TR = MJS = XTI = 0.13125 24.165 1.5563 13.461 0.70543 5.403 3.2276 7.5068 0.017655 1.1487 2.6912 0 3 fA V V fF ps mA V ns - BF = IKF = BR = IKR = RB = RE = VJE = XTF = PTF = MJC = CJS = XTB = FC = 76.123 0.58905 21.254 0.25878 2.1659 0.45346 0.95292 0.69972 0 0.50644 0 0 0.91274 A A V deg F - NF = ISE = NR = ISC = IRB = RC = MJE = VTF = CJC = XCJC = VJS = EG = TNOM 0.79652 28.341 1.2966 0.012292 0.013181 0.50084 0.48672 0.66148 1049.5 0.28285 0.75 1.11 300 pA A mA V fF V eV K C'-E'-Diode Data (Berkley-SPICE 2G.6 Syntax) : IS = 25 fA N= 1.05 - RS = 5 All parameters are ready to use, no scalling is necessary Package Equivalent Circuit: C CB L BI = L BO = L CI C'-E'Diode 0.31 0.63 0.2 0.05 0.29 0.68 208 3.2 213 nH nH nH nH nH nH fF fF fF L BO B L BI B' Transistor Chip E' C' L CO C L EI = L EO = L CI = L CO = C BE = C CB = C CE = EHA07389 C BE L EI C CE L EO E Valid up to 6GHz The SOT-343 package has two emitter leads. To avoid high complexity of the package equivalent circuit, both leads are combined in one electrical connection. Extracted on behalf of SIEMENS Small Signal Semiconductors by: Institut fur Mobil-und Satellitentechnik (IMST) (c) 1996 SIEMENS AG For examples and ready to use parameters please contact your local Siemens distributor or sales office to obtain a Siemens CD-ROM or see Internet: http://www.siemens.de/Semiconductor/products/35/35.htm Semiconductor Group Semiconductor Group 44 Sep-09-1998 1998-11-01 BFP 450 For non-linear simulation: * Use transistor chip parameters in Berkeley SPICE 2G.6 syntax for all simulators. * If you need simulation of thereverse characteristics, add the diode with the C'-E'- diode data between collector and emitter. * Simulation of package is not necessary for frequenties < 100MHz. For higher frequencies add the wiring of package equivalent circuit around the non-linear transistor and diode model. Note: * This transistor is constructed in a common emitter configuration. This feature causes an additional reverse biased diode between emitter and collector, which does not effect normal operation. C B E E EHA07307 Transistor Schematic Diagram The common emitter configuration shows the following advantages: * Higher gain because of lower emitter inductance. * Power is dissipated via the grounded emitter leads, because the chip is mounted on copper emitter leadframe. Please note, that the broadest lead is the emitter lead. The AC characteristics are verified by random sampling. Semiconductor Group Semiconductor Group 55 Sep-09-1998 1998-11-01 BFP 450 Total power dissipation P tot = f (T A*, TS) * Package mounted on epoxy Transition frequency fT = f (IC) f = 1 GHz VCE = parameter in V 500 mW 28 GHz 2 to 4 1.5 1 0.75 24 400 350 TS TA 22 20 18 P tot 300 250 200 150 100 50 0 0 fT 16 14 12 10 8 6 4 2 0.5 20 40 60 80 100 120 C 150 0 0 20 40 60 80 mA 120 TA,TS IC Permissible Pulse Load R thJS = f (tp) Permissible Pulse Load Ptotmax/P totDC = f (tp) 10 3 10 1 K/W RthJS Pmax / PDC 10 2 - 10 1 -7 10 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 -6 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 -5 10 -4 10 -3 10 -2 s 10 0 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp Semiconductor Group Semiconductor Group 66 Sep-09-1998 1998-11-01 BFP 450 Power gain G ma, G ms, |S 21|2 = f ( f ) VCE = 2V, I C = 50 mA 48 dB Power gain Gma, Gms = f (I C) VCE = 2V f = parameter in GHz 28 dB 40 36 32 24 22 20 0.9 G 28 24 20 16 12 8 4 0 0.0 G 16 14 12 10 8 Gms 18 1.8 2.4 3 4 5 6 G ma |S21 |2 6 4 2 1.0 2.0 3.0 4.0 GHz 6.0 0 0 20 40 60 80 mA 120 f IC Power gain G ma, G ms = f (V CE) I C = 50 mA Collector-base capacitance Ccb = f (VCB) VBE = 0, f = 1MHz 1.4 0.9 pF f = Parameter in GHz 26 dB 22 20 18 1.0 1.8 2.4 3 G 16 14 12 10 8 6 4 2 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 V Ccb 0.8 0.6 4 5 6 0.4 0.2 4.5 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 V 4.0 VCE VCB Semiconductor Group Semiconductor Group 77 Sep-09-1998 1998-11-01 BFP 450 Noise figure F = f (IC) Noise figure F = f (IC) VCE = 2 V, ZS = Z Sopt 3.0 VCE = 2 V, f = 1.8 GHz 4.5 dB dB 3.5 2.0 3.0 F F 2.5 1.5 2.0 1.0 1.5 1.0 0.5 0.0 0 0.5 f = 4 GHz f = 3 GHz f = 2.4 GHz f = 1.8 GHz f = 0.9 GHz ZS = 50Ohm ZS = ZSopt 0.0 0 10 20 30 40 50 60 70 80 mA 100 10 20 30 40 50 60 70 80 mA 100 IC IC Noise figure F = f ( f ) Source impedance for min. Noise Figure versus Frequency VCE = 2 V, ZS = Z Sopt 3.0 VCE = 2 V, I C = 10 mA / 50 mA +j50 dB +j25 +j100 +j10 2.0 F 1.8GHz 0.9GHz 1.5 0 10 25 2.4GHz 50 100 1.0 3GHz IC = 50 mA IC = 10 mA 0.5 -j10 4GHz 10mA 50mA -j25 -j50 -j100 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 GHz 4.5 f Semiconductor Group Semiconductor Group 88 Sep-09-1998 1998-11-01 |
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